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HiPerFETTM Power MOSFETs
Q Class
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg
IXFH 13N80Q IXFT 13N80Q
VDSS ID25 RDS(on)
= = =
800 V 13 A 0.70 W
trr 250 ns
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
Maximum Ratings 800 800 20 30 13 52 13 28 750 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C
TO-268 (D3) (IXFT) Case Style
G S
(TAB)
TO-247 AD (IXFH)
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268
300
1.13/10 Nm/lb.in. 6 4 g g Features * * * * IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated * Fast switching * Molding epoxies meet UL 94 V-0 flammability classification
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C
Characteristic Values Min. Typ. Max. 800 2.5 4.5 100 50 1 0.70 V V nA mA mA W
Advantages * Easy to mount * Space savings * High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98626 (6/99)
(c) 2000 IXYS All rights reserved
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IXFH 13N80Q IXFT 13N80Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 8 13 3250 VGS = 0 V, VDS = 25 V, f = 1 MHz 310 60 23 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 3.2 W (External) 36 55 19 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 30 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXFH) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive;
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 13 52 1.5 250 A A V ns mC A
J K L M N
1.5 2.49
IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.8 7.5
TO-268AA (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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